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The 18th Asia and South Pacific Design Automation Conference

Session 8A  Designers' Forum: Photonics for Embedded Systems
Time: 13:40 - 15:40 Friday, January 25, 2013
Organizer: Toshiki Sugawara (Hitachi, Japan)

8A-1 (Time: 13:40 - 14:10)
Title(Invited Paper) Silicon Photonics Technology Platform for Embedded and Integrated Optical Interconnect Systems
Author*Peter De Dobbelaere (Luxtera, U.S.A.)
Pagepp. 644 - 647
Keywordsilicon photonics, optical transceiver
AbstractBy taking advantage of the vast investments made by the semiconductor industry, silicon photonics allows high-volume, high yield and low-cost manufacturing of complex photonic integrated circuits, including high-speed optical transceivers. In order to take full advantage of the CMOS semiconductor technology, the development and progress of Si photonics should further standardize and adhere to established CMOS technology methodologies and roadmaps.

8A-2 (Time: 14:10 - 14:40)
Title(Invited Paper) High-Frequency Circuit Design for 25Gb/s×4 Optical Transceiver
Author*Norio Chujo, Takashi Takemoto, Fumio Yuki, Hiroki Yamashita (Hitachi, Japan)
Pagepp. 648 - 651
Keywordoptical module, transceiver
AbstractA 25-Gb/s optical transceiver module has been developed for backplanes. Itis necessary to downsize current modules while reducing power consumption and increasing speed up to 25 Gb/s. We employed many approaches to achieve this by reducing crosstalk noise, by enhancing power integrity, and by using CMOS-based analog FE and on-chip termination and optical waveform optimization. The fully integrated transceiver IC was fabricated with the 65-nm CMOS process and the package was small, being 9 x 14 mm in size.

8A-3 (Time: 14:40 - 15:10)
Title(Invited Paper) Design and Application of Highly Integrated Optical Switches Based on Silicon Photonics
Author*Shigeru Nakamura (NEC, Japan)
Pagepp. 652 - 654
KeywordSilicon photonics
AbstractSilicon photonics is promising for integrating various functional optical devices according to applications. Here we discuss the possibility of applying silicon photonics devices to optical path switching in wide area photonic network nodes. System design including optical switches and device design for implementing silicon photonics based optical switch are discussed. We integrate thermo-optical switch elements based on silicon optical waveguides into a compact one-chip device as a 8 x 8 optical switch. We demonstrate its capabilities such as high extinction ratio operation independently of polarization and ambient temperature, which are considered a critical step toward real application.

8A-4 (Time: 15:10 - 15:40)
Title(Invited Paper) High Performance PIN Ge Photodetector and Si Optical Modulator with MOS Junction for Photonics-Electronics Convergence System
Author*Junichi Fujikata, Masataka Noguchi, Makoto Miura, Masashi Takahashi, Shigeki Takahashi, Tsuyoshi Horikawa, Yutaka Urino, Takahiro Nakamura, Yasuhiko Arakawa (PETRA, Japan)
Pagepp. 655 - 656
KeywordSi photonics, Ge photodetector, Si optical modulation
AbstractWe report on a high speed silicon-waveguide- integrated PIN Ge photodetector of 45 GHz bandwidth, and a high efficiency of 0.3 V¥cm silicon optical modulator with a metal-oxide-semiconductor (MOS) junction by applying the low optical loss and high conductivity poly-silicon gate. These OE/EO devices enable low drive voltage of around 1V, which would contribute to a high density optical interposer of the future photonics-electronics convergence system.