Workshop
12th International Workshop on Compact Modeling (IWCM) Program
Jan. 25, 2016| Time | Events |
|---|---|
| 9:00-9:10am | Opening |
| 9:10-9:30am | Compact Modeling of SiC IGBT for Temperature Dependent Switching Analysis K. Matsuura, Y. Tanimoto, Y. Miyaoku, A. Saito, H. J. Mattausch, and M. Miura-Mattausch Hiroshima University |
| 9:30-9:50am | Physics-based Modeling of Gate-leakage Current in AlGaN/GaN High Electron Mobility Transistors Xiaoyu Ma, Fei Yu, Wanling Deng, Junkai Huang Jinan University |
| 9:50-10:10am | Modeling of theTunneling-Limited Current in the Electrode-Electroactive Monolayer-Electrolyte Interface WonCheol Lee, Seongwook Choi, Jun Yeon Yun, JaeWoong Lee, Dong-Sik Shin, Young June Park Seoul National University |
| 10:10-10:30am | Coffee Break |
| 10:30-10:50am | Modeling of Planar Spreading of Current for OTFT of Low Aspect Ratio H M Dipu Kabir, Zubair Ahmed, S M Salahuddin, Remashan Kariyadan, Lining Zhang and Mansun Chan The Hong Kong University of Science and Technology |
| 10:50-11:10pm | Analysis of 1/f Noise for Polycrystalline Silicon TFTs Considering Mobility Power-Law Parameter Hongyu He, Yuan Liu, Hao Wang, Xinnan Lin, Xueren Zheng, and Shengdong Zhang Peking University Shenzhen Graduate School |
| 11:10-11:30am | Prediction of Device Temperature Increase in Consequence of Self-Heating and Cooling Balance K. Araki, T. Nishimura, M. Miura-Mattausch, and H. J. Mattausch Hiroshima University |
| 11:30am-14:00pm | Lunch Break |
| 14:00-14:20pm | Modeling spatial distribution induced variability in CNT array based FETs Zubair Ahmed, Lining Zhang, Khawar Sarfraz, Mansun Chan The Hong Kong University of Science and Technology |
| 14:20-14:40pm | A Graphene Nanoribbon Topological Junction Tunnel FET Using Heavy Doping Yawei Lv, Hao Wang, Sheng Chang, Ruohua Zhu Wuhan University |
| 14:40-15:00pm | Hetero-Gate-DielectricCarbon Nanotube Tunnel FET Hao Wang, Ruohua Zhu, Yawei Lv, and Sheng Chang Wuhan University |
| 15:00-15:20pm | Break |
| 15:20-15:40pm | Compact Modeling for Prediction of Long-Term CMOS Degradation H. Miyamoto, C. Ma, H. Tanoue, Y. Tanimoto, H. Kikuchihara, H. J. Mattausch, and M. Miura-Mattausch HiSIM Research Center, Hiroshima University |
| 15:40-16:00pm | Simulation Study on the Time Dependent Dielectric Breakdown Characteristics of Cylindrical VNAND Flash Memory Kanguk Kim, Seongwook Choi and Young June Park Seoul National University |
| 16:00-16:20pm | 4H-SiC IGBT Electrical Degradation Characteristics Due to Interface Defects Dondee Navarro, Yoji Morikawa, Masato Fujinaga, and Yoshiharu Furui Silvaco Japan |
| 16:20-16:30pm | Closing |