Title | (Invited Paper) High-Frequency Circuit Design for 25Gb/s×4 Optical Transceiver |
Author | *Norio Chujo, Takashi Takemoto, Fumio Yuki, Hiroki Yamashita (Hitachi, Japan) |
Page | pp. 648 - 651 |
Keyword | optical module, transceiver |
Abstract | A 25-Gb/s optical transceiver module has been developed for backplanes. Itis necessary to downsize current modules while reducing power consumption and increasing speed up to 25 Gb/s. We employed many approaches to achieve this by reducing crosstalk noise, by enhancing power integrity, and by using CMOS-based analog FE and on-chip termination and optical waveform optimization. The fully integrated transceiver IC was fabricated with the 65-nm CMOS process and the package was small, being 9 x 14 mm in size. |
Title | (Invited Paper) High Performance PIN Ge Photodetector and Si Optical Modulator with MOS Junction for Photonics-Electronics Convergence System |
Author | *Junichi Fujikata, Masataka Noguchi, Makoto Miura, Masashi Takahashi, Shigeki Takahashi, Tsuyoshi Horikawa, Yutaka Urino, Takahiro Nakamura, Yasuhiko Arakawa (PETRA, Japan) |
Page | pp. 655 - 656 |
Keyword | Si photonics, Ge photodetector, Si optical modulation |
Abstract | We report on a high speed silicon-waveguide- integrated PIN Ge photodetector of 45 GHz bandwidth, and a high efficiency of 0.3 V¥cm silicon optical modulator with a metal-oxide-semiconductor (MOS) junction by applying the low optical loss and high conductivity poly-silicon gate.
These OE/EO devices enable low drive voltage of around 1V, which would contribute to a high density optical interposer of the future photonics-electronics convergence system. |