Title | (Invited Paper) Unconditionally Stable Explicit Method for the Fast 3-D Simulation of On-Chip Power Distribution Network with Through Silicon Via |
Author | *Tadatoshi Sekine, Hideki Asai (Shizuoka University, Japan) |
Page | pp. 7 - 12 |
Keyword | power distribution network, through silicon via, explicit method, unconditionally stable, fast circuit simulation |
Abstract | In this work, we propose the method which is explicit, but stable with no stability condition for the fast simulation of the equivalent circuit of on-chip power distribution network with a number of through silicon vias. Additionally, the proposed unconditionally stable explicit method is accelerated more by combining with an order reduction technique. |
Title | (Invited Paper) Signal Integrity Modeling and Measurement of TSV in 3D IC |
Author | *Joungho Kim, Joungho Kim (Korea Advanced Institute of Science and Technology, Republic of Korea) |
Page | pp. 13 - 16 |
Keyword | Through Silicon Via, Signal Integrity, Modeling, Measurement |
Abstract | In order to guarantee signal integrity of a TSV-based
channel in 3D IC design, the modeling and measurements are
conducted for electrical characterization of the TSV-based
channel including TSVs and RDLs with various performance
metrics such as insertion loss, noise coupling and eye diagrams.
Based on the modeling and measurements of the fabricated TSV
channels, design guide for the signal integrity of the channel is
proposed. |
Slides |
Title | (Invited Paper) Power Distribution Network Modeling for 3-D ICs with TSV Arrays |
Author | Chi-Kai Shen, Yi-Chang Lu, Yih-Peng Chiou, Tai-Yu Cheng, *Tzong-Lin Wu (National Taiwan University, Taiwan) |
Page | pp. 17 - 22 |
Keyword | 3-D IC, PDN, equivalent circuit model, TSV, CNIM |
Abstract | A coupling node insertion method (CNIM) is proposed to handle electrical coupling between top metals of on-chip interconnects and silicon substrate surfaces in three-dimensional integrated circuits (3-D ICs). This coupling effect should not be neglected especially as metal area is intentionally increased in order to reduce resistance values. In this paper, we illustrate how to build the CNIM model and incorporate it into power distribution networks. The CNIM model is validated by comparing our results to the one obtained from a full-wave simulator. The differences between two approaches are within 5% but our computation time is shorter than that required by a full-wave simulator. |