| Title | Thermal Simulator of 3D-IC with Modeling of Anisotropic TSV Conductance and Microchannel Entrance Effects |
| Author | Hanhua Qian, Hao Liang, Chip-Hong Chang, Wei Zhang, *Hao Yu (Nanyang Technological University, Singapore) |
| Page | pp. 485 - 490 |
| Keyword | thermal model, 3D-IC, TSV, entrance effect, microchannel |
| Abstract | This paper presents a fast and accurate steady state thermal simulator for heatsink and microfluid-cooled 3D-ICs. This model considers the thermal effect of TSVs at fine-granularity by calculating the anisotropic equivalent thermal conductances of a solid grid cell if TSVs are inserted. Entrance effect of microchannels is also investigated for accurate modeling of microfluidic cooling. The proposed thermal simulator is verified against commercial multiphysics solver COMSOL and compared with Hotspot and 3D-ICE. Simulation results shows that for heatsink cooling, the proposed simulator is as accurate as Hotspot but runs much faster at moderate granularity. For microfluidic cooling, our proposed simulator is much more accurate than 3D-ICE in its estimation of steady state temperature and thermal distribution. |
| Slides |
| Title | Improving Energy Efficiency for Energy Harvesting Embedded Systems |
| Author | Yang Ge, Yukan Zhang, *Qinru Qiu (Syracuse University, U.S.A.) |
| Page | pp. 497 - 502 |
| Keyword | Hybrid electrical energy storage system, energy harvesting system, bank reconfiguration |
| Abstract | While the energy harvesting system (EHS) supplies green energy to the embedded system, it also suffers from uncertainty and large variation in harvesting rate. This constraint can be remedied by using efficient energy storage. Hybrid Electrical Energy Storage (HEES) system is proposed recently as a cost effective approach with high power conversion efficiency and low self-discharge. In this paper, we propose a fast heuristic algorithm to improve the efficiency of charge allocation and replacement in an EHS/HEES equipped embedded system. The goal of our algorithm is to minimize the energy overhead on the DC-DC converter while satisfying the task deadline constraints of the embedded workload and maximizing the energy stored in the HEES system. We first provide an approximated but accurate power consumption model of the DC-DC converter. Based on this model, the optimal operating point of the system can be analytically solved. Integrated with the dynamic reconfiguration of the HEES bank, our algorithm provides energy efficiency improvement and run-time overhead reduction compared to previous approaches. |
| Title | Modeling Variability and Irreproducibility of Nanoelectronic Resistive Switches for Circuit Simulation |
| Author | *Arne Heittmann, Tobias G. Noll (RWTH Aachen University, Germany) |
| Page | pp. 503 - 508 |
| Keyword | variability, resistive switches, electochemical metallization effect, hybrid circuits, nanoelectronics |
| Abstract | This paper presents a device model for nanoelectronic resistive switches which are based on the electrochemical metallization effect (ECM). The focus is set on modeling variability as well as irreproducibility which are essential properties of scaled nanoelectronic devices. In particular, a Poisson-based random ion deposition model and a non-linear filament surface effect are described. The model is especially useful for circuit simulation and can be implemented on standard circuit simulation platforms such as Spice or Spectre using inbuilt standard elements. Based on this model, effects of variability were examined by Monte Carlo simulation for a particular hybrid CMOS/nanoelectronic circuit. The results show that the proposed model is able to cover significant scaling effects, which is necessary for prospective design space exploration and circuit optimization. |