| Title | Mask Optimization for Directed Self-Assembly Lithography: Inverse DSA and Inverse Lithography |
| Author | *Seongbo Shim, Youngsoo Shin (KAIST, Republic of Korea) |
| Page | pp. 83 - 88 |
| Keyword | DSAL, mask optimization, inverse DSA, inverse lithography |
| Abstract | In directed self-assembly lithography (DSAL), a mask contains the images of guide patterns (GPs), which are patterned on a wafer through optical lithography; the wafer then goes through DSA process to pattern contacts. Mask design for DSAL, which is the opposite of the above processes, consists of two key steps, inverse DSA and inverse lithography, which we address in this paper. |
| Slides |
| Title | Cut Redistribution with Directed Self-Assembly Templates for Advanced 1-D Gridded Layouts |
| Author | *Zhi-Wen Lin, Yao-Wen Chang (National Taiwan University, Taiwan) |
| Page | pp. 89 - 94 |
| Keyword | Directed self-assembly technology, 1-D layout, Design for manufacturability and reliability, Algorithm |
| Abstract | Directed self-assembly (DSA) technology is a promising candidate for cut printing in sub-10nm 1-D gridded designs, where cuts might need to be redistributed such that they could be patterned by DSA guiding templates.
In this paper, we first propose a linear-time optimal dynamic-programming-based algorithm for a special case of the template guided cut redistribution problem, where there is at most one dummy wire segment on a track. We then extend our algorithm to general cases by applying a bipartite matching algorithm to decompose a general problem to a set of subproblems conforming to the special case (thus each of them can be solved optimally). Our resulting algorithm can achieve a provably good performance bound, with the cost of a template distribution only linearly to the problem size. Experimental results show that our algorithm can resolve all spacing rule violations, with smaller running times, compared with the previous works on a set of common benchmarks. |
| Title | Contact Layer Decomposition To Enable DSA With Multi-patterning Technique For Standard Cell Based Layout |
| Author | Zigang Xiao, Chun-Xun Lin, *Martin D.F. Wong (University of Illinois at Urbana-Champaign, U.S.A.), Hongbo Zhang (Synopsys Inc., U.S.A.) |
| Page | pp. 95 - 102 |
| Keyword | Design for Manufacturability, Directed Self-Assembly, Complementary Lithography, Layout Decomposition, Hybrid Lithography |
| Abstract | Multiple patterning lithography has been widely adopted for today's circuit manufacturing. However, increasing the number of masks will make the manufacturing process more expensive. More importantly, towards 7 nm technology node, the accumulated overlay in multiple patterning will cause unacceptable edge placement error (EPE). Recently, directed self-assembly (DSA) has been shown to be an effective lithography technology that can pattern contact/via/cuts with high throughput and low cost. DSA is currently aiming at 7 nm technology, where the guiding template generation needs either double patterning EUV or multiple patterning DUV process. By incorporating DSA into the multiple patterning process, it is possible to reduce the number of masks and achieve a cost effective solution. In this paper, we study the decomposition problem for contact layer in row-based standard cell layout with DSA-MP complementary lithography. We explore several heuristic-based approaches, and propose an algorithm that decomposes a standard cell row optimally in polynomial-time. Our experiments show that our algorithm guarantees to find a minimum cost solution if one exists, while the heuristic cannot or only finds a sub-optimal solution. Our results show that the DSA-MP complementary approach is very promising for the future advanced nodes. |