| Title | Geometry Variations Analysis of TiO2 Thin-Film and Spintronic Memristors |
| Author | *Miao Hu, Hai Li (Polytechnic Institute of New York University, U.S.A.), Yiran Chen (University of Pittsburgh, U.S.A.), Xiaobin Wang (Seagate Technology, U.S.A.), Robinson Pino (AFRL/RITC, U.S.A.) |
| Page | pp. 25 - 30 |
| Keyword | memristor, process variation, TiO2 thin-film, spintronic |
| Abstract | The fourth passive circuit element, memristor, has attracted increased attentions since the first real device was discovered by HP Lab in 2008. Its distinctive characteristic to record the historic profile of the voltage/current through itself creates great potentials in future system design. However, as a nano-scale device, memristor is facing great challenge on process variation control in the manufacturing. The impact of process variations on a memristive system that relies on the continuous (analog) states of the memristor could be significant due to the deviation of the memristor state from the designed value. In this work, we analyze the impact of the geometry variations on the electrical properties of both TiO2 thin-film and spintronic memristors, including line edge roughness (LER) and thickness fluctuation. A simple algorithm was proposed to generate a large volume of geometry variation-aware three-dimensional device structures for Monte-Carlo simulations. Our simulation results show that due to the different physical mechanisms, TiO2 thin-film memristor and spintronic memristor demonstrate very different electrical characteristics even when exposing the two types of devices to the same excitations and under the same process variation conditions. |
| Slides |
| Title | AdaMS: Adaptive MLC/SLC Phase-Change Memory Design for File Storage |
| Author | *Xiangyu Dong, Yuan Xie (Pennsylvania State University, U.S.A.) |
| Page | pp. 31 - 36 |
| Keyword | PCM, MLC, Adaptive, Storage |
| Abstract | Phase-change memory (PCM) is an emerging memory technology that has made rapid progress in the recent years, and surpasses other technologies such as FeRAM and MRAM in terms of scalability. Recently, the feasibility of multi-level cell (MLC) for PCM has also been shown, which enables a PCM cell to store more than one bit of digital data. This new property makes PCM more competitive and is able to be considered as the successor of the NAND Flash technology, which also has MLC capability but does not have an easy scaling path to reach the higher densities provided by future technology nodes. However, theMLC capability of PCMcomes with the penalty of longer programming time and shortened cell lifetime compared to its single-level cell (SLC) mode. Therefore, it suggests an adaptive MLC/SLC reconfigurable PCM design that can exploit the fast SLC access speed and large MLC capacity with the awareness of workload characteristic and lifetime requirement. In this paper, a circuit-level adaptive MLC/SLC PCM array is designed at first, the management policy of MLC/SLC mode is proposed, and finally the performance and lifetime of a novel PCM-based SSD with run-time MLC/SLC reconfiguration ability is evaluated. |
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| Title | System Accuracy Estimation of SRAM-based Device Authentication |
| Author | Joonsoo Kim, Joonsoo Lee, *Jacob A. Abraham (The University of Texas at Austin, U.S.A.) |
| Page | pp. 37 - 42 |
| Keyword | SRAM Fingerprint, Device Authentication, HW Security, System Error-Rate Estimation and Its Confidence Interval, Bootstrapping |
| Abstract | It is known that power-up values of embedded SRAM memory are unique for each individual chip. The uniqueness enables the power-up values to be considered as SRAM fingerprints used to verify device identities, which is a fundamental task in security applications. However, as the SRAM fingerprints are sensitive to environmental changes, there always exists a chance of error during the authentication process. Hence, the accuracy of a device authentication system with the SRAM fingerprints should be carefully estimated and verified in order to be implemented in practice. Consequently, a proper system evaluation method for the SRAM-based device authentication system should be provided. In this paper, we introduce tractable and computationally efficient system evaluation methods, which include novel parametric models for the distributions of matching distances among genuine and imposter devices. In addition, novel algorithms to calculate the confidence intervals of the estimates, which are crucial in system evaluation, are presented. Also, empirical results follow to validate the models and methods. |
| Title | On-Chip Hybrid Power Supply System for Wireless Sensor Nodes |
| Author | *Wulong Liu, Yu Wang, Wei Liu, Yuchun Ma (Tsinghua University, China), Yuan Xie (Pennsylvania State University, U.S.A.), Huazhong Yang (Tsinghua University, China) |
| Page | pp. 43 - 48 |
| Keyword | hybrid power, wireless sensor node, fuel cell |
| Abstract | With the miniaturization of electronic devices, small size but high capacity power supply system appears to be more and more important. A hybrid power source, which consists of a fuel cell (FC) and a rechargeable battery, has the advantages of long lifetime and good load following capabilities. In this paper, we propose the schematic of a hybrid power supply system, that can be integrated on a chip compatible with present CMOS process. Besides, considering the problem of maximizing the on chip fuel cell's lifetime, we propose a modified dynamic power management (DPM) algorithm for on chip fuel cell based hybrid power system in wireless sensor node design. Taking the wireless sensor node powered by this hybrid power system as an example, we analyze the improvement of the FC-Bat hybrid power system. The simulation results demonstrate that the on-chip FC-Bat hybrid power system can be used for wireless sensor node under different usage scenarios. Meanwhile, for an on chip power system with 1cm2 area consumption, the wafer-level battery can power a typical sensor node for only about 5 months, while our on chip hybrid power system will supply the same sensor node for 2 years steadily. |
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